? semiconductor components industries, llc, 2012 august, 2012 ? rev. 6 1 publication order number: ngtb15n60e/d NGTB15N60EG igbt - short-circuit rated this insulated gate bipolar transistor (igbt) features a robust and cost effective non ? punch through (npt) trench construction, and provides superior performance in demanding switching applications. offering both low on state voltage and minimal switching loss, the igbt is well suited for motor drive control and other hard switching applications. incorporated into the device is a rugged co ? packaged reverse recovery diode with a low forward voltage. features ? low saturation voltage resulting in low conduction loss ? low switching loss in higher frequency applications ? soft fast reverse recovery diode ? 10 s short circuit capability ? excellent current versus package size performance density ? this is a pb ? free device typical applications ? white goods appliance motor control ? general purpose inverter ? ac and dc motor control absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 120 a diode forward current @ t c = 25 c @ t c = 100 c i f 30 15 a diode pulsed current, t pulse limited by t jmax i fm 120 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 117 47 w short circuit withstand time v ge = 15 v, v ce = 400 v, t j +150 c t sc 10 s operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 220 case 221a style 4 15 a, 600 v v cesat = 1.7 v device package shipping ordering information NGTB15N60EG to ? 220 (pb ? free) 50 units / rail http://onsemi.com marking diagram g e c 15n60g ayww a = assembly location y = year ww = work week g = pb ? free package g c e c
NGTB15N60EG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction to case, for igbt r jc 1.06 c/w thermal resistance junction to case, for diode r jc 3.76 c/w thermal resistance junction to ambient r ja 60 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v , i c = 15 a v ge = 15 v , i c = 15 a, t j = 150 c v cesat 1.45 1.8 1.7 2.1 1.95 2.4 v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? 10 ? ? 200 a gate leakage current, collector ? emitter short ? circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na forward transconductance v ce = 20 v, i c = 15 a g fs ? 10.1 ? s dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 2600 ? pf output capacitance c oes ? 64 ? reverse transfer capacitance c res ? 42 ? gate charge total v ce = 480 v, i c = 15 a, v ge = 15 v q g ? 80 ? nc gate to emitter charge q ge ? 24 ? gate to collector charge q gc ? 33 ? switching characteristic , inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 15 a r g = 22 v ge = 0 v / 15 v t d(on) ? 78 ? ns rise time t r ? 30 ? turn ? off delay time t d(off) ? 130 ? fall time t f ? 120 ? turn ? on switching loss e on ? 0.900 ? mj turn ? off switching loss e off ? 0.300 ? total switching loss e ts ? 1.200 ? turn ? on delay time t j = 150 c v cc = 400 v, i c = 15 a r g = 22 v ge = 0 v / 15 v t d(on) ? 76 ? ns rise time t r ? 33 ? turn ? off delay time t d(off) ? 133 ? fall time t f ? 223 ? turn ? on switching loss e on ? 1.10 ? mj turn ? off switching loss e off ? 0.510 ? total switching loss e ts ? 1.610 ? diode characteristic forward voltage v ge = 0 v, i f = 15 a v ge = 0 v, i f = 15 a, t j = 150 c v f ? ? 1.6 1.6 1.85 ? v
NGTB15N60EG http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min symbol test conditions diode characteristic reverse recovery time t j = 25 c i f = 15 a, v r = 200 v di f /dt = 200 a/ s t rr ? 270 ? ns reverse recovery charge q rr ? 350 ? nc reverse recovery current i rrm ? 5 ? a reverse recovery time t j = 125 c i f = 15 a , v r = 200 v di f /dt = 200 a/ s t rr ? 350 ? ns reverse recovery charge q rr ? 1000 ? nc reverse recovery current i rrm ? 7.5 ? a
NGTB15N60EG http://onsemi.com 4 typical characteristics figure 1. igbt output characteristics v ce , collector ? emitter voltage (v) i c , collector current (a) v ge = 17 v to 13 v 11 v 9 v 7 v t j = 25 c figure 2. igbt output characteristics v ce , collector ? emitter voltage (v) i c , collector current (a) t j = 150 c 13 v 11 v 9 v 7 v figure 3. igbt output characteristics v ce , collector ? emitter voltage (v) i c , collector current (a) t j = ? 40 c 11 v 9 v 7 v figure 4. typical transfer characteristics v ge , gate ? emitter voltage (v) i c , collector current (a) t j = ? 40 c 25 c 150 c figure 5. v ce(sat) vs. t j t j , junction temperature ( c) v ce , collector ? emitter voltage (v) i c = 30 a i c = 15 a i c = 10 a i c = 5 a figure 6. typical capacitance v ce , collector ? emitter voltage (v) capacitance (pf) c ies c oes c res v ge = 0 v, f = 1 mhz 60 50 40 30 20 10 0 012345678 60 50 40 30 20 10 0 01 2 345 6789 60 50 40 30 20 10 0 01 2 345 678 v ce = 20 v 60 50 40 30 20 10 0 04 12 816 3.5 3 2.5 2 1.5 1 0.5 0 ? 60 ? 40 ? 20 0 20 40 60 80 100 120 140 160 10000 1000 100 10 0 10 20 30 100 40 60 80 90 70 50 v ge = 17 v to 15 v v ge = 17 v to 13 v
NGTB15N60EG http://onsemi.com 5 typical characteristics v ces = 120 v v ces = 480 v i c = 15 a 20 0 figure 7. diode forward characteristics v f , forward voltage (v) i f , forward current (a) figure 8. typical gate charge q g , gate charge (nc) v ge , gate ? emitter voltage (v) ? 40 c 25 c 150 c 0 0.5 1 1.5 2 2.5 35 30 25 20 15 10 5 0 15 10 5 0 20 40 60 100 80 figure 9. switching loss vs. temperature t j , junction temperature ( c) switching loss (mj) e on e off 0 20 40 60 100 120 140 160 80 1.2 1 0.8 0.6 0.4 0.2 0 v ce = 400 v v ge = 15 v i c = 15 a rg = 22 figure 10. switching time vs. temperature t j , junction temperature ( c) switching time (ns) t f t d(off) t d(on) t r 1000 100 10 1 0 20 40 60 100 120 140 160 80 200 180 v ce = 400 v v ge = 15 v i c = 15 a rg = 22 switching loss (mj) figure 11. switching loss vs. i c i c , collector current (a) e on e off 3 812 2428 16 32 20 2 1 0 v ce = 400 v v ge = 15 v t j = 150 c rg = 22 figure 12. switching time vs. i c i c , collector current (a) switching time (ns) t f t d(off) t d(on) t r 1000 100 10 1 812 2428 16 32 20 v ce = 400 v v ge = 15 v t j = 150 c rg = 22
NGTB15N60EG http://onsemi.com 6 typical characteristics figure 13. switching loss vs. rg rg, gate resistor ( ) switching loss (mj) 2 5 15253545 55657585 1.6 1.2 0.8 0.4 0 e on e off v ce = 400 v v ge = 15 v i c = 15 a t j = 150 c t f t d(off) t d(on) t r v ce = 400 v v ge = 15 v i c = 15 a t j = 150 c figure 14. switching time vs. rg rg, gate resistor ( ) switching time (ns) 5 15253545 55657585 1000 100 10 1 figure 15. switching loss vs. v ce switching energy (mj) v ce , collector ? emitter voltage (v) e on e off 2 1.6 1.2 0.8 0.4 0 175 225 275 325 375 425 475 525 575 v ge = 15 v i c = 15 a rg = 22 t j = 150 c figure 16. switching time vs. collector ? emitter voltage v ce , collector ? emitter voltage (v) switching time (ns) t f t d(off) t d(on) t r 1000 100 10 1 175 225 275 325 375 425 475 525 575 v ge = 15 v i c = 15 a rg = 22 t j = 150 c figure 17. safe operating area 1000 100 10 1 0.01 0.1 1 10 100 1000 single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature v ce , collector ? emitter voltage (v) i c , collector current (a) 50 s 100 s 1 ms dc operation figure 18. reverse bias safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) v ge = 15 v, t c = 125 c 1000 100 10 1 0.01 0.1 1 10 100 1000
NGTB15N60EG http://onsemi.com 7 typical characteristics 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 19. igbt transient thermal impedance pulse time (sec) thermal response (z jc ) 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 1.06 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 7.1e ? 5 1.0e ? 4 0.002 0.003 0.00999 r i ( c/w) 0.1 0.05010 0.15051 0.33992 0.10550 0.03 0.20020 0.1 0.11423 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 20. diode transient thermal impedance pulse time (sec) thermal response (z jc ) 50% duty cycle 20% 10% 5% 2% 1% single pulse junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 7 1.0e ? 6 1.0e ? 5 7.1e ? 5 1.0e ? 4 r i ( c/w) 0.01895 0.04097 0.12956 0.1 0.20199 0.002 1.62730 0.003 0.57301 0.00498 0.45453 0.03 0.40199 0.1 0.21558 r jc = 3.76 figure 21. test circuit for switching characteristics
NGTB15N60EG http://onsemi.com 8 figure 22. definition of turn on waveform
NGTB15N60EG http://onsemi.com 9 figure 23. definition of turn off waveform
NGTB15N60EG http://onsemi.com 10 package dimensions to ? 220 case 221a ? 07 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 ? t ? seating plane s r j u t c style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb15n60e/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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